inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF640FI features low rds(on) = 0.180 ( ? typ) lower input capacitance improved gate charge extended safe operating area rugged gate oxide technology description designed for use in switch mode power supplies and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 200 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 10 a i dm drain current-single pluse 40 a p d total dissipation @t c =25 40 w t j max. operating junction temperature -55~150 t stg storage temperature -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w r th j-a thermal resistance, junction to ambient 80 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 3 isc n-channel mosfet transistor IRF640FI electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 200 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d =9a 0.18 i gss gate-body leakage current v gs = 20v;v ds = 0 500 na i dss zero gate voltage drain current v ds = 200v; v gs = 0 v ds = 160v; v gs = 0; t j = 125 250 1000 a v sd forward on-voltage i s = 10a; v gs = 0 2.0 v pdf pdffactory pro www.fineprint.cn
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